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The structures of the diodes and the TFTs have been optimized. The reference a-Si:H/a-SiO diodes are not optimal in dark current. With the structure of a-Si:H/a-SiO diodes with a bottom electrode (cathode), an increase in dark current is observed.
The characteristics of the PIN diodes have been studied. The PIN diodes of a-Si:H structure with different structures have been prepared, and their parameters such as diode capacitance and dark current have been studied. The diodes with a structure of a-Si:H/a-SiO with a bottom electrode have the best parameters and are suitable for applications in CIS linear image sensors.
The influence of the nanocrystallization, laser crystallization and film thickness on the charge transport properties of a-Si:H has been investigated using the measurements of the capacitance-voltage and current-voltage characteristics. The analysis of the results allows us to conclude that the crystallinity and film thickness affect strongly the charge transport properties of the thin silicon layers, especially their mobility.
The results have shown that the obtained high performance TFTs with a threshold voltage (Vth) of 2.5V have the same effective mobility and on/off ratio as the reference devices. A significant improvement in the efficiency of laser crystallization process has been observed. The most important result is the potential of laser crystallization for the formation of digital pixel structures in the multilayer image sensors. The influence of crystallization on the electrical characteristics of the photodiodes has been determined using the reference devices.
The parameters of the photodiodes, such as quantum efficiency (QE), dark and light currents, etc. have been measured. These results show that the a-Si:H layers improve the QE and reduce the dark current of the photodiodes.
The dynamic characteristics (latency time) of the TFT and pin diode have been obtained. This demonstrates that the laser crystallized a-Si:H layers reduce the TFT and pin diode latency time compared to the non-laser crystallized layer.
The effect of a-Si:H layers on image sensor properties such as quantum efficiency (QE), dark and light currents, etc. has been investigated. The results show that the a-Si:H layers in the multilayer image sensor structure reduce the dark current, improve the QE and increase the light sensitivity. 827ec27edc